Fully Self-Aligned Via

ABSTRACT

A first metallization layer comprising a set of first conductive lines that extend along a first direction on a first insulating layer on a substrate. A second insulating layer is on the first insulating layer. A second metallization layer comprises a set of second conductive lines on a third insulating layer and on the second insulating layer above the first metallization layer. The set of second conductive lines extend along a second direction that crosses the first direction at an angle. A via between the first metallization layer and the second metallization layer. The via is self-aligned along the second direction to one of the first conductive lines.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Divisional Application of U.S. application Ser.No. 15/679,458, filed on Aug. 17, 2017, which claims priority to U.S.Provisional Application No. 62/481,301, filed Apr. 4, 2017, the entiredisclosures of which are hereby incorporated by reference herein.

TECHNICAL FIELD

Embodiments of the present disclosure pertain to the field of electronicdevice manufacturing, and in particular, to an integrated circuit (IC)manufacturing.

BACKGROUND

Generally, an integrated circuit (IC) refers to a set of electronicdevices, e.g., transistors formed on a small chip of semiconductormaterial, typically, silicon. Typically, the IC includes one or morelayers of metallization having metal lines to connect the electronicdevices of the IC to one another and to external connections. Typically,layers of the interlayer dielectric material arc placed between themetallization layers of the IC for insulation.

As the size of the IC decreases, the spacing between the metal linesdecreases. Typically, to manufacture an interconnect structure, a planarprocess is used that involves aligning and connecting one layer ofmetallization to another layer of metallization.

Typically, patterning of the metal lines in the metallization layer isperformed independently from the vias above that metallization layer.Conventional via manufacturing techniques, however, cannot provide thefull via self-alignment. In the conventional techniques, the vias formedto connect lines in an upper metallization layer to a lowermetallization arc often misaligned to the lines in the lowermetallization layer. The via-line misalignment increases via resistanceand leads to potential shorting to the wrong metal line. The via-linemisalignment causes device failures, decreases yield and increasesmanufacturing cost.

SUMMARY

Methods and apparatuses to provide full via self-alignment aredescribed. In one embodiment, a first metallization layer comprises aset of first conductive lines that extend along a first direction on afirst insulating layer on a substrate. A second insulating layer is onthe first insulating layer. A second metallization layer comprises a setof second conductive lines on a third insulating layer and on the secondinsulating layer above the first metallization layer. The set of secondconductive lines extend along a second direction that crosses the firstdirection at an angle. A via is between the first metallization layerand the second metallization layer. The via is self-aligned along thesecond direction to one of the first conductive lines.

In one embodiment, first conductive lines on a first insulating layer ona substrate are recessed. The first conductive lines extend along afirst direction on the first insulating layer. Pillars are formed on therecessed first conductive lines. A second insulating layer is formedbetween the pillars. The pillars are removed to form trenches in thesecond insulating layer. A third insulating layer is deposited throughthe trenches onto the recessed first conductive lines. The thirdinsulating layer is etched selectively relative to the second insulatinglayer to form a via opening down to one of the first conductive lines.

In one embodiment, a system to manufacture an electronic devicecomprises a processing chamber that comprises a pedestal to hold anelectronic device structure. The electronic device structure comprises afirst metallization layer that comprises a set of first conductive linesthat extend along a first direction on a first insulating layer on asubstrate. A plasma source is coupled to the processing chamber togenerate plasma. A processor is coupled to the plasma source. Theprocessor has a configuration to control recessing the first conductivelines. The processor has a configuration to control recessing the firstconductive lines. The processor has a configuration to control formingpillars on the recessed first conductive lines. The processor has aconfiguration to control depositing a second insulating layer betweenthe pillars. The processor has a configuration to control removing thepillars to form trenches in the second insulating layer. The processorhas a configuration to control depositing a third insulating layerthrough the trenches onto the recessed first conductive lines. Theprocessor has a sixth configuration to control etching the thirdinsulating layer selectively relative to the second insulating layer toform a via opening down to one of the first conductive lines.

Other features of the present disclosure will be apparent from theaccompanying drawings and from the detailed description which follows.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this disclosure and are therefore not to beconsidered limiting of its scope, for the disclosure may admit to otherequally effective embodiments. The embodiments as described herein areillustrated by way of example and not limitation in the figures of theaccompanying drawings in which like references indicate similarelements.

FIG. 1A illustrates a top view and a cross-sectional view of anelectronic device structure to provide a fully self-aligned viaaccording to one embodiment.

FIG. 1B is a perspective view of the electronic device structuredepicted in FIG. 1A.

FIG. 2A is a view similar to FIG. 1A, after the conductive lines arerecessed according to one embodiment.

FIG. 2B is a view similar to FIG. 1B, after the conductive lines arerecessed according to one embodiment.

FIG. 3 is a view similar to FIG. 2A, after a liner is deposited on therecessed conductive lines according to one embodiment.

FIG. 4 is a view similar to FIG. 3, after a seed gapfill layer isdeposited on the liner according to one embodiment.

FIG. 5A is a view similar to FIG. 4, after portions of the seed gapfilllayer are removed to expose top portions of the insulating layeraccording to one embodiment.

FIG. 5B is a perspective view of the electronic device structure shownin FIG. 5A.

FIG. 6A is a view similar to FIG. 5A, after self-aligned selectivegrowth pillars are formed according to one embodiment.

FIG. 6B is a view similar to FIG. 5B, after self-aligned selectivegrowth pillars are formed according to one embodiment.

FIG. 7A is a view similar to FIG. 6A after an insulating layer isdeposited to overfill the gaps between the pillars according to oneembodiment.

FIG. 7B is a view similar to FIG. 6B, after an insulating layer isdeposited to overfill the gaps between the pillars according to oneembodiment.

FIG. 8A is a view similar to FIG. 7A, after a portion of the insulatinglayer is removed to expose the top portions of the pillars according toone embodiment.

FIG. 8B is a view similar to FIG. 6A, after an insulating layer isdeposited to underfill the gaps between the pillars according to anotherembodiment.

FIG. 9A is a view similar to FIG. 8A after the self-aligned selectivelygrown pillars are selectively removed to form trenches according to oneembodiment.

FIG. 9B is a perspective view of the electronic device structuredepicted in FIG. 9A.

FIG. 10A is a view similar to FIG. 9A after an insulating layer isdeposited into trenches according to one embodiment.

FIG. 10B is a view similar to FIG. 9B after an insulating layer isdeposited into trenches according to one embodiment.

FIG. 11 is a view similar to FIG. 10B after a hard mask layer isdeposited on an insulating layer according to one embodiment.

FIG. 12A is a view similar to FIG. 11 after a mask layer is deposited onan insulating layer on the patterned hard mask layer according to oneembodiment.

FIG. 12B is a cross-sectional view of FIG. 12A along an axis B-B′.

FIG. 13A is a view similar to FIG. 12B after the insulating layer isselectively etched according to one embodiment.

FIG. 13B is a view similar to FIG. 12A after the insulating layer isselectively etched according to one embodiment.

FIG. 14A is a view similar to FIG. 10A after a mask layer is depositedon a hard mask layer according to one embodiment.

FIG. 14B is a top view of the electronic device structure depicted inFIG. 14A.

FIG. 15A is a view similar to FIG. 14A after portions of the hard masklayer and the insulating layer are removed according to one embodiment.

FIG. 15B is a top view of the electronic device structure depicted inFIG. 15A.

FIG. 16A is a view similar to FIG. 15A after a fully self-alignedopening is formed in insulating layer according to one embodiment.

FIG. 16B is a top view of the electronic device structure depicted inFIG. 16A.

FIG. 17A is a view similar to FIG. 16A after an upper metallizationlayer comprising conductive lines extending along a Y axis is formedaccording to one embodiment.

FIG. 17B is a top view of the electronic device structure depicted inFIG. 17A.

FIG. 18A is a view similar to FIG. 10A after a mask layer is depositedon a hard mask layer according to one embodiment.

FIG. 18B is a top view of the electronic device structure depicted inFIG. 18A.

FIG. 19A is a view similar to FIG. 18A after portions of the hard masklayer and the insulating layer are removed according to one embodiment.

FIG. 19B is a top view of the electronic device structure depicted inFIG. 19A.

FIG. 20A is a view similar to FIG. 19A after forming a planarizationfilling layer and mask layer according to one embodiment.

FIG. 20B is a top view of the electronic device structure depicted inFIG. 20A.

FIG. 21A is a view similar to FIG. 20A after a fully self-alignedopening is formed in insulating layer according to one embodiment.

FIG. 21B is a top view of the electronic device structure depicted inFIG. 21A.

FIG. 22A is a view similar to FIG. 21A after an upper metallizationlayer comprising conductive lines extending along a Y axis is formedaccording to one embodiment.

FIG. 22B is a top view of the electronic device structure depicted inFIG. 22A.

FIG. 23 shows a block diagram of a plasma system to provide a fullyself-aligned via according to one embodiment.

DETAILED DESCRIPTION

Before describing several exemplary embodiments of the disclosure, it isto be understood that the disclosure is not limited to the details ofconstruction or process steps set forth in the following description.The disclosure is capable of other embodiments and of being practiced orbeing carried out in various ways.

A “substrate” as used herein, refers to any substrate or materialsurface formed on a substrate upon which film processing is performedduring a fabrication process. For example, a substrate surface on whichprocessing can be performed include materials such as silicon, siliconoxide, strained silicon, silicon on insulator (SOI), carbon dopedsilicon oxides, amorphous silicon, doped silicon, germanium, galliumarsenide, glass, sapphire, and any other materials such as metals, metalnitrides, metal alloys, and other conductive materials, depending on theapplication. Substrates include, without limitation, semiconductorwafers. Substrates may be exposed to a pretreatment process to polish,etch, reduce, oxidize, hydroxylate, anneal and/or bake the substratesurface. In addition to film processing directly on the surface of thesubstrate itself, in the present disclosure, any of the film processingsteps disclosed may also be performed on an under-layer formed on thesubstrate as disclosed in more detail below, and the term “substratesurface” is intended to include such under-layer as the contextindicates. Thus for example, where a film/layer or partial film/layerhas been deposited onto a substrate surface, the exposed surface of thenewly deposited film/layer becomes the substrate surface.

As used in this specification and the appended claims, the terms“precursor”, “reactant”, “reactive gas” and the like are usedinterchangeably to refer to any gaseous species that can react with thesubstrate surface.

Methods and apparatus to provide fully self-aligned vias are described.In one embodiment, a first metallization layer comprising a set of firstconductive lines extending along a first direction on a first insulatinglayer on a substrate is formed. A second insulating layer is formed onthe first insulating layer. A second metallization layer comprising aset of second conductive lines on a third insulating layer above thefirst metallization layer is formed. The set of second conductive linesextend along a second direction. A via is formed between the firstmetallization layer and the second metallization layer. The via isself-aligned along the second direction to one of the first conductivelines. The via is self-aligned along the first direction to one of thesecond conductive lines, as described in further detail below. In oneembodiment, the first and second directions cross each other at anangle. In one embodiment, the first direction and second direction aresubstantially orthogonal to each other.

In one embodiment, a fully self-aligned via is fabricated using aselective pillar growth technique. In one embodiment, the conductivelines on a first insulating layer on a substrate are recessed. Theconductive lines extend along a first direction on the first insulatinglayer. Pillars are formed on the recessed conductive lines. A secondinsulating layer is deposited between the pillars. A third insulatinglayer is deposited on the second insulating layer. The third insulatinglayer is selectively etched relative to the second insulating layer toform a via opening down to one of the conductive lines, as described infurther detail below.

In one embodiment, a fully self-aligned via is the via that isself-aligned along at least two directions to the conductive lines in alower and an upper metallization layer. In one embodiment, the fullyself-aligned via is defined by a hard mask in one direction and theunderlying insulating layer in another direction, as described infurther detail below.

Comparing to the conventional techniques, the embodiments to provide thefully self-aligned vias advantageously eliminate the via misalignmentissues and avoid shortening to the wrong metal line. The fullyself-aligned vias provide lower via resistance and capacitance benefitsover the conventional vias. Embodiments of the self-aligned vias providethe full alignment between the vias and the conductive lines of themetallization layers that is substantially error free thatadvantageously increase the device yield and reduce the device cost.

In the following description, numerous specific details, such asspecific materials, chemistries, dimensions of the elements, etc. areset forth in order to provide thorough understanding of one or more ofthe embodiments of the present disclosure. It will be apparent, however,to one of ordinary skill in the art that the one or more embodiments ofthe present disclosure maybe practiced without these specific details.In other instances, semiconductor fabrication processes, techniques,materials, equipment, etc., have not been descried in great details toavoid unnecessarily obscuring of this description. Those of ordinaryskill in the art, with the included description, will be able toimplement appropriate functionality without undue experimentation.

While certain exemplary embodiments of the disclosure are described andshown in the accompanying drawings, it is to be understood that suchembodiments are merely illustrative and not restrictive of the currentdisclosure, and that this disclosure is not restricted to the specificconstructions and arrangements shown and described because modificationsmay occur to those ordinarily skilled in the art.

Reference throughout the specification to “one embodiment”, “anotherembodiment”, or “an embodiment” means that a particular feature,structure, or characteristic described in connection with the embodimentis included in a least one embodiment of the present disclosure. Thus,the appearance of the phrases “in one embodiment” or “in an embodiment”in various places throughout the specification are not necessarily allreferring to the same embodiment of the disclosure. Furthermore, theparticular features, structures, or characteristics may be combined inany suitable manner in one or more embodiments.

Moreover, inventive aspects lie in less than all the features of asingle disclosed embodiment of the disclosure. Thus, the claimsfollowing the Detailed Description are hereby expressly incorporatedinto this Detailed Description, with each claim standing on its own as aseparate embodiment of this disclosure. While the disclosure has beendescribed in terms of several embodiments, those skilled in the art willrecognize that the disclosure if not limited to the embodimentsdescribed, but can be practiced with modification and alteration withinthe spirit and scope of the appended claims. The description is thus tobe regarded as illustrative rather than limiting.

FIG. 1A illustrates a top view 100 and a cross-sectional view 110 of anelectronic device structure to provide a fully self-aligned viaaccording to one embodiment. The cross-sectional view 110 is along anaxis A-A′, as depicted in FIG. 1A. FIG. 1B is a perspective view 120 ofthe electronic device structure depicted in FIG. 1A. A lowermetallization layer (Mx) comprises a set of conductive lines 103 thatextend along an X axis (direction) 121 on an insulating layer 102 on asubstrate 101, as shown in FIGS. 1A and 1B. As shown in FIG. 1B, X axis(direction) 121 crosses Y axis (direction) 122 at an angle 123. In oneembodiment, angle 123 is about 90 degrees. In another embodiment, angle123 is an angle that is other than the 90 degrees angle. The insulatinglayer 102 comprises trenches 104. The conductive lines 103 are depositedin trenches 104.

In an embodiment, the substrate 101 comprises a semiconductor material,e.g., silicon (Si), carbon (C), germanium (Ge), silicon germanium(SiGe), galloum arsenide (GaAs), InP, GaAs, InGaAs, InAlAs, othersemiconductor material, or any combination thereof. In an embodiment,substrate 101 is a semiconductor-on-isolator (SOI) substrate including abulk lower substrate, a middle insulation layer, and a topmonocrystalline layer. The top monocrystalline layer may comprise anymaterial listed above, e.g., silicon. In various embodiments, thesubstrate can be, e.g., an organic. A ceramic, a glass, or asemiconductor substrate. Although a few examples of materials from whichthe substrate may be formed are described here, any material that mayserve as a foundation upon which passive and active electronic devices(e.g., transistors, memories, capacitors, inductors, resistors,switches, integrated circuits, amplifiers, optoelectronic devices, orany other electronic devices) may be built falls within the spirit andscope of the present disclosure.

In one embodiment, substrate 101 includes one or more metallizationinterconnect layers for integrated circuits. In at least someembodiments, the substrate 101 includes interconnects, for example,vias, configured to connect the metallization layers. In at least someembodiments, the substrate 101 includes electronic devices, e.g.,transistors, memories, capacitors, resistors, optoelectronic devices,switches, and any other active and passive electronic devices that areseparated by an electrically insulating layer, for example, aninterlayer dielectric, a trench insulation layer, or any otherinsulating layer known to one of ordinary skill in the art of theelectronic device manufacturing. In one embodiment, the substrateincludes one or more buffer layers to accommodate for a lattice mismatchbetween the substrate 101 and one or more layers above substrate 101 andto confine lattice dislocations and defects.

Insulating layer 102 can be any material suitable to insulate adjacentdevices and prevent leakage. In one embodiment, electrically insulatinglayer 102 is an oxide layer, e.g., silicon dioxide, or any otherelectrically insulating layer determined by an electronic device design.In one embodiment, insulating layer 102 comprises an interlayerdielectric (ILD). In one embodiment, insulating layer 102 is a low-kdielectric that includes, but is not limited to, materials such as,e.g., silicon dioxide, silicon oxide, carbon doped oxide (“CDO”), e.g.,carbon doped silicon dioxide, porous silicon dioxide, silicon nitride,or any combination thereof.

In one embodiment, insulating layer 102 includes a dielectric materialhaving a k-value less than 5. In one embodiment, insulating layer 102includes a dielectric material having a k-value less than 2. In at leastsome embodiments, insulating layer 102 includes a nitride, oxide, apolymer, phosphosilicate glass, fluourosilicate (SiOF) glass,organosilicate glass (SiOCH), other electrically insulating layerdetermined by an electronic device design, or any combination thereof.In at least some embodiments, insulating layer 102 may includepolyimide, epoxy, photodefinable materials, such as benzocyclobutene(BCB), and WPR-series materials, or spin-on-glass.

In one embodiment, insulating layer 102 is a low-k interlayer dielectricto isolate one metal line from other metal lines on substrate 101. Inone embodiment, the thickness of the layer 102 is in an approximaterange from about 10 nanometers (nm) to about 2 microns (μm).

In an embodiment, insulating layer 102 is deposited using one ofdeposition techniques, such as but not limited to a chemical vapordeposition (“CVD”), a physical vapor deposition (“PVD”), molecular beamepitaxy (“MBE”), metalorganic chemical vapor deposition (“MOCVD”),atomic layer deposition (“ALD”), spin-on, or other insulating depositiontechniques known to one of ordinary skill in the art of microelectronicdevice manufacturing.

In one embodiment, the lower metallization layer Mx comprisingconductive lines 103 (i.e., metal lines) is a part of a back endmetallization of the electronic device. In one embodiment, theinsulating layer 102 is patterned and etched using a hard mask to formtrenches 104 using one or more patterning and etching techniques knownto one of ordinary skill in the art of microelectronic devicemanufacturing. In one embodiment, the size of trenches in the insulatinglayer 102 is determined by the size of conductive lines formed later onin a process.

In one embodiment, forming the conductive lines 201 involves filling thetrenches 104 with a layer of conductive material. In one embodiment, abase layer (not shown) is first deposited on the internal sidewalls andbottom of the trenches 104, and then the conductive layer is depositedon the base layer. In one embodiment, the base layer includes aconductive seed layer (not shown) deposited on a conductive barrierlayer (not shown). The seed layer can include copper, and the conductivebarrier layer can include aluminum, titanium, tantalum, tantalumnitride, and the like metals. The conductive barrier layer can be usedto prevent diffusion of the conductive material from the seed layer,e.g., copper, into the insulating layer 102. Additionally, theconductive barrier layer can be used to provide adhesion for the seedlayer (e.g., copper).

In one embodiment, to form the base layer, the conductive barrier layeris deposited onto the sidewalls and bottom of the trenches 104, and thenthe seed layer is deposited on the conductive barrier layer. In anotherembodiment, the conductive base layer includes the seed layer that isdirectly deposited onto the sidewalls and bottom of the trenches 104.Each of the conductive barrier layer and seed layer may be depositedusing any think film deposition technique known to one of ordinary skillin the art of semiconductor manufacturing, e.g., sputtering, blanketdeposition, and the like. In one embodiment, each of the conductivebarrier layer and the seed layer has the thickness in an approximaterange from about 1 nm to about 100 nm. In one embodiment, the barrierlayer may be a thin dielectric that has been etched to establishconductivity to the metal layer below. In one embodiment, the barrierlayer may be omitted altogether and appropriate doping of the copperline may be used to make a “self-forming barrier”.

In one embodiment, the conductive layer e.g., copper, is deposited ontothe seed layer of base layer of copper, by an electroplating process. Inone embodiment, the conductive layer is deposited into the trenches 104using a damascene process known to one of ordinary skill in the art ofmicroelectronic device manufacturing. In one embodiment, the conductivelayer is deposited onto the seed layer in the trenches 104 using aselective deposition technique, such as but not limited toelectroplating, electroless, A CVD, PVD, MBE, MOCVD, ALD, spin-on, orother deposition techniques know to one of ordinary skill in the art ofmicroelectronic device manufacturing.

In one embodiment, the choice of a material for conductive layer for theconductive lines 103 determines the choice of a material for the seedlayer. For example, if the material for the conductive lines 103includes copper, the material for the seed layer also includes copper.In one embodiment, the conductive lines 103 include a metal, forexample, copper (Cu), ruthenium (Ru), nickel (Ni), cobalt (Co), chromium(Cr), iron (Fe), manganese (Mn), titanium (Ti), aluminum (Al), hafnium(Hf), tantalum (Ta), tungsten (W), vandium (V), molybdenum (Mo),palladium (Pd), gold (Au), silver (Ag), platinum (Pt), indium (In), tin(Sn), lead (Pd), antimony (Sb), bismuth (Bi), zinc (Zn), cadmium (Cd),or any combination thereof.

In alternative embodiments, examples of the conductive materials thatmay be used for the conductive lines 103 of the metallization layer Mxare, but not limited to, metals, e.g., copper, tantalum, tungsten,ruthenium, titanium, hafnium, zirconium, aluminum, silver, tin, lead,metal alloys, metal carbides, e.g., hafnium carbide, zirconium carbide,titanium carbide, tantalum carbide, aluminum carbide, other conductivematerials, or any combination thereof.

In one embodiment, portions of the conductive layer and the base layerare removed to even out top portions of the conductive lines 103 withtop portions of the insulating layer 102 using a chemical-mechanicalpolishing (“CMP”) technique known to one of ordinary skill in the art ofmicroelectronic device manufacturing.

In one non-limiting example, the thickness of the conductive lines 103is in an approximate range from about 15 nm to about 1000 nm. In onenon-limiting example, the thickness of the conductive lines 103 is fromabout 20 nm to about 200 nm. In one non-limiting example, the width ofthe conductive lines 103 is in an approximate range from about 5 nm toabout 500 nm. In one non-limiting example, the spacing (pitch) betweenthe conductive lines 103 is from about 2 nm to about 500 nm. In morespecific non-limiting example, the spacing (pitch) between theconductive lines 103 is from about 5 nm to about 50 nm.

In an embodiment, the lower metallization layer Mx is configured toconnect to other metallization layers (not shown). In an embodiment, themetallization layer Mx is configured to provide electrical contact toelectronic devices, e.g., transistor, memories, capacitors, resistors,optoelectronic devices, switches, and any other active and passiveelectronic devices that are separated by an electrically insulatinglayer, for example, an interlayer dielectric, a trench insulation layer,or any other insulating layer known to one of ordinary skill in the artof electronic device manufacturing.

FIG. 2A is a view 200 similar to view 110 of FIG. 1A, after theconductive lines 103 are recessed according to one embodiment. FIG. 2Bis a view 210 similar to FIG. 1 B, after the conductive lines 103 arerecessed according to one embodiment. The conductive lines 103 arerecessed to a predetermined depth to form recessed conductive lines 201.As shown in FIGS. 2A and 2B, trenches 202 are formed in the insulatinglayer 102. Each trench 202 has sidewalls 204 that are portions ofinsulating layer 102 and a bottom that is a top surface 203 of therecessed conductive line 201.

In one embodiment, the depth of the trenches 202 is from about 10 nm toabout 500 nm. In one embodiment, the depth of the trenches 202 is fromabout 10% to about 100% of the thickness of the conductive lines. In oneembodiment, the conductive lines 103 are recessed using one or more ofwet etching, dry etching, or a combination thereof techniques known toone of ordinary skill in the art of electronic device manufacturing.

FIG. 3 is a view 300 similar to FIG. 2A, after a liner 301 is depositedon the recessed conductive lines 201 according to one embodiment. Liner301 is deposited on the bottom and sidewalls of the trenches 202, asshown in FIG. 3.

In one embodiment, liner 301 is deposited to protect the conductivelines 201 from changing the properties later on in a process (e.g.,during tungsten deposition, or other processes). In one embodiment,liner 301 is a conductive liner. In another embodiment, liner 301 is anon-conductive liner. In one embodiment, when liner 301 is anon-conductive liner, the liner 301 is removed later on in a process, asdescribed in further detail below. In one embodiment, liner 301 includestitanium nitride (TiN), titanium (Ti), tantalum (Ta), tantalum nitride(TaN), or any combination thereof. In another embodiment, liner 301 isan oxide, e.g., aluminum oxide (AlO), titanium oxide (TiO₂). In yetanother embodiment, liner 301 is a nitride, e.g., silicon nitride (SiN).In an embodiment, the liner 301 is deposited to the thickness from about0.5 nm to about 10 nm.

In an embodiment, the liner 301 is deposited using an atomic layerdeposition (ALD) technique. In one embodiment, the liner 301 isdeposited using one of deposition techniques, such as but no limited toa CVD, PVD, MBE, MOCVD, spin-on, or other liner deposition techniquesknow to one of ordinary skill in the art of microelectronic devicemanufacturing.

FIG. 4 is a view 400 similar to FIG. 3, after a seed gapfill layer 401is deposited on the liner 301 according to one embodiment. In oneembodiment, seed gapfill layer 401 is a self-aligned selective growthseed film. As shown in FIG. 4, seed gapfill layer 401 is deposited onliner 301 on the top surface 203 of the recessed conductive lines 201,the sidewalls 204 of the trenches 202 and top portions of the insulatinglayer 102. In one embodiment, seed gapfill layer 401 is a tungsten (W)layer, or other seed gapfill layer to provide selective growth pillars.In some embodiments, seed gapfill layer 401 is a metal film or a metalcontaining film. Suitable metal films include, but are not limited to,films including one or more of cobalt (Co), molybdenum (Mo), tungsten(W), tantalum (Ta), titanium (Ti), ruthenium (Ru), rhodium (Rh), copper(Cu), iron (Fe), manganese (Mn), vanadium (V), niobium (Nb), hafnium(Hf), zirconium (Zr), yttrium (Y), aluminum (Al), tin (Sn), chromium(Cr), lanthanum (La), or any combination thereof. In some embodiments,seed gapfill layer 401 comprises is a tungsten (W) seed gapfill layer.

In one embodiment, the seed gapfill layer 401 is deposited using one ofdeposition techniques, such as but not limited to an ALD, a CVD, PVD,MBE, MOCVD, spin-on or other liner deposition techniques known to one ofordinary skill in the art of microelectronic device manufacturing.

FIG. 5A is a view 500 similar to FIG. 4, after portions of the seedgapfill layer 401 are removed to expose top portions of the insulatinglayer 102 according to one embodiment. FIG. 5B is a perspective view ofthe electronic device structure shown in FIG. 5A. In one embodiment, theportions of the seed gapfill layer 401 are removed using one of thechemical-mechanical polishing (CMP) techniques known to one of ordinaryskill in the art of microelectronic device manufacturing.

FIG. 6A is a view 600 similar to FIG. 5A, and FIG. 6B is a view 610similar to FIG. 5B, after self-aligned selective growth pillars 601 areformed using the seed gapfill layer 401 on the liner 301 on the recessedconductive lines 201 according to one embodiment. As shown in FIGS. 6Aand 6B, an array of the self-aligned selective growth pillars 601 hasthe same pattern as the set of the conductive lines 201. As shown inFIGS. 6A and 6B, the pillars 601 extend substantially orthogonally fromthe top surfaces of the conductive lines 201. As shown in FIGS. 6A and6B, the pillars 601 extend along the same direction as the conductivelines 201. As shown in FIGS. 6A and 6B, the pillars are separated bygaps 603.

In one embodiment, the pillars 601 are selectively grown from the seedgapfill layer 401 on portions of the liner 301 on the conductive lines201. The pillars 601 are not grown on portions of the liner 301 on theinsulating layer 102, as shown in FIGS. 6A and 6B. In one embodiment,portions of the seed gapfill layer 401 above the conductive lines 201are expanded for example, by oxidation, nitridation, or other process togrow pillars 601. In one embodiment, the seed gap fill layer 401 isoxidized by exposure to an oxidizing agent or oxidizing conditions totransform the metal or metal containing seed gapfill layer 401 to metaloxide pillars 601. In one embodiment, pillars 601 include an oxide ofone or more metals listed above. In more specific embodiment, pillars601 include tungsten oxide (e.g., WO, WO₃ and other tungsten oxide).

The oxidizing agent can be any suitable oxidizing agent including, butnot limited to, O₂, O₃, N₂O, H₂O, H₂O₂, CO, CO₂, NH₃, N₂/Ar, N₂/He,N₂/Ar/He or any combination thereof. In some embodiments, the oxidizingconditions comprise a thermal oxidation, plasma enhanced oxidation,remote plasma oxidation, microwave and radio-frequency oxidation (e.g.,inductively coupled plasma (ICP), capacitively coupled plasma (CCP)).

In one embodiment, the pillars 601 are formed by oxidation of the seedgapfill layer at any suitable temperature depending on, for example, thecomposition of the seed gapfill layer and the oxidizing agent. In someembodiments, the oxidation occurs at a temperature in an approximaterange of about 25 degrees C. to about 800 degrees C. In someembodiments, the oxidation occurs at a temperature greater than or equalto about 150° C.

In one embodiment, the height 602 of the pillars 601 is in anapproximate range from about 5 angstroms (Å) to about 10 microns (μm).

FIG. 7A is a view 700 similar to FIG. 6A, and FIG. 7B is a view 710similar to FIG. 6B, after an insulating layer 701 is deposited tooverfill the gaps 603 between the pillars 601 according to oneembodiment. As shown in FIGS. 7A and 7B, insulating layer 701 isdeposited on the opposing sidewalls 702 and top portions 703 of thepillars 601 and through the gaps 603 on the portions of the insulatinglayer 102 and liner 301 between the pillars 601.

In one embodiment, insulating layer 701 is a low-k gapfill layer. In oneembodiment, insulating layer 701 is a flowable silicon oxide (FSiOx)layer. In at least some embodiments, insulating layer 701 is an oxidelayer, e.g., silicon dioxide, or any other electrically insulating layerdetermined by an electronic device design. In one embodiment, insulatinglayer 701 is an interlayer dielectric (ILD). In one embodiment,insulating layer 701 is a low-k dielectric that includes, but is notlimited to, materials such as, e.g., silicon dioxide, silicon oxide, acarbon based material, e.g, a porous carbon film, carbon doped oxide(“CDO”), e.g., carbon doped silicon dioxide, porous silicon dioxide,porous silicon oxide carbide hydride (SiOCH), silicon nitride, or anycombination thereof. In one embodiment, insulating layer 701 is adielectric material having k-value less than 3. In more specificembodiment, insulating layer 701 is a dielectric material having k-valuein an approximate range from about 2.2 to about 2.7. In one embodiment,insulating layer 701 includes a dielectric material having k-value lessthan 2. In one embodiment, insulating layer 701 represents one of theinsulating layers described above with respect to insulating layer 102.

In one embodiment, insulating layer 701 is a low-k interlayer dielectricto isolate one metal line from other metal lines. In one embodiment,insulating layer 701 is deposited using one of deposition techniques,such as but not limited to a CVD, spin-on, an ALD, PVD. MBE, MOCVD, orother low-k insulating layer deposition techniques known to one ofordinary skill in the art of microelectronic device manufacturing.

FIG. 8A is a view 800 similar to FIG. 7A, after a portion of theinsulating layer 701 is removed to expose the top portions 703 of thepillars 601 according to one embodiment. In one embodiment, the portionof the insulating layer 701 is removed using a CMP technique known toone of ordinary skill in the art of microelectronic devicemanufacturing. In one embodiment, the portion of the insulating layer701 is etched back to expose the top portions 703 of the pillars 601using one or more of the dry and wet etching techniques known to one ofordinary skill in the art of microelectronic device manufacturing.

FIG. 8B is a view 800 similar to FIG. 6A, after an insulating layer 701is deposited to underfill (partially fill) the gaps 603 between thepillars 601 according to another embodiment. As shown in FIG. 8B,insulating layer 701 is deposited through gaps 603 on lower portions ofopposing sidewalls 702 the pillars 601 and the portions of theinsulating layer 102 and liner 301 between pillars 601. In oneembodiment, insulating layer 701 is deposited to a predeterminedthickness to expose the top portions 703 and upper portions of theopposing sidewalls 702 of the pillars 601.

In one embodiment, insulating layer 701 is deposited using one ofdeposition techniques, such as but not limited to a CVD, spin-on, anALD, PVD, MBE, MOCVD, or other low-k insulating layer depositiontechniques known to one of ordinary skill in the art of microelectronicdevice manufacturing. In another embodiment, insulating layer 701 isdeposited to overfill the gaps 603 between the pillars 601, as describedwith respect to FIG. 7A, and then a portion of the insulating layer 701is etched back to expose upper portions 811 of the sidewalls 702 and topportions 703 of the pillars 601 using one or more of the dry and wetetching techniques known to one of ordinary skill in the art ofmicroelectronic device manufacturing.

FIG. 9A is a view similar to FIG. 8A after the self-aligned selectivelygrown pillars 601 are selectively removed to form trenches 901 accordingto one embodiment. FIG. 9B is a perspective view of the electronicdevice structure depicted in FIG. 9A. As shown in FIGS. 9A and 9B, thepillars 601 are removed selectively to the insulating layer 701 andliner 301. In another embodiment, when liner 301 is a non-conductiveliner, liner 301 is removed. In one embodiment, the pillars 601 andliner 301 are removed selectively to the insulating layers 701 and 102and conductive lines 201. As shown in FIGS. 9A and 9B, trenches 901 areformed in the insulating layers 701 and 102. Trenches 901 extend alongthe recessed conductive lines 201. As shown in FIGS. 9A and 9B, eachtrench 901 has a bottom that is a bottom portion 902 of liner 301 andopposing sidewalls that include a sidewall portion 903 of liner 301 anda portion of insulating layer 701. In another embodiment, when liner 301is removed, each trench 901 has a bottom that is recessed conductiveline 201 and opposing sidewalls that include portions of insulatinglayers 701 and 102. Generally, the aspect ratio of the trench refers tothe ratio of the depth of the trench to the width of the trench. In oneembodiment, the aspect ratio of each trench 901 is in an approximaterange from about 1:1 to about 200:1.

In one embodiment, the pillars 601 are selectively removed using one ormore of the dry and wet etching techniques known to one of ordinaryskill in the art of electronic device manufacturing. In one embodiment,the pillars 601 are selectively wet etched by e.g., 5 wt % of ammoniumhydroxide (NH₄OH) aqueous solution at the temperature of about 80degrees C. In one embodiment, hydrogen peroxide (H₂O₂) is added to the 5wt % NH₄OH aqueous solution to increase the etching rate of the pillars601. In one embodiment, the pillars 601 are selectively wet etched usinghydrofluoric acid (HF) and nitric acid (HNO₃) in a ratio of 1:1. In oneembodiment, the pillars 601 are selectively wet etched using HF and HNO₃in a ratio of 3:7 respectively. In one embodiment, the pillars 601 areselectively wet etched using HF and HNO₃ in a ratio of 4:1,respectively. In one embodiment, the pillars 601 are selectively wetetched using HF and HNO₃ in a ratio of 30%:70%, respectively. In oneembodiment, the pillars 601 including tungsten, titanium or bothtitanium and tungsten are selectively wet etched using NH₄OH and H₂O₂ ina ratio of 1:2, respectively. In one embodiment, the pillars 601 areselectively wet etched using 305 grams of potassium ferricyanide(K₃Fe(CN)₆), 44.5 grams of sodium hydroxide (NaOH) and 1000 ml of water(H₂O). In one embodiment, the pillars 601 are selectively wet etchedusing diluted or concentrated one or more of the chemistries includinghydrochloric acid (HCl), HNO₃, surfuric acid (H₂SO₄), HF, and H₂O₂. Inone embodiment, the pillars 601 are selectively wet etched using HF,HNO₃ and acetic acid (HAc) in a ratio of 4:4:3, respectively. In oneembodiment, the pillars 601 are selectively dry etched using abromotrifluoromethane (CBrF3) reactive ion etching (RIE) technique. Inone embodiment, the pillar 601 are selectively dry etched using achlorine, fluorine, bromine or any combination thereof basedchemistries. In one embodiment, the pillars 601 are selectively wetetched using hot or warm Aqua Regia mixture including HCI and HNO₃ in aratio of 3:1, respectively. In one embodiment, the pillars 601 areselectively etched using alkali with oxidizers (potassium nitrate (KNO₃)and lead dioxide (PbO₂)). In one embodiment, the liner 301 isselectively removed using one or more of the dry and wet etchingtechniques known to one of ordinary skill in the art of electronicdevice manufacturing.

FIG. 10A is a view 1000 and FIG. 10B is a view 1010 that are similar toFIGS. 9A and 9B respectively after an insulating layer 1001 is depositedinto trenches 901 according to one embodiment. As shown in FIGS. 10A and10B, insulating layer 1001 overfills the trenches 901 so that portionsof the insulating layer 1001 are deposited on the top portions of theinsulating layer 701. In one embodiment, the thickness of the insulatinglayer 1001 is greater or similar to the thickness of the insulatinglayer 701. In one embodiment, the thickness 1002 is at least two orthree times greater than the thickness of the insulating layer 701. Inanother embodiment, the portions of the insulating layer 1001 areremoved using one or more of the CMP or a back etch techniques to evenout with the top portions of the insulating layer 701, and then otherinsulating layer (not shown) is deposited onto the top portions of theinsulating layer 701 and insulating layer 1001. As shown in FIGS. 10Aand 10B, insulating layer 1001 is deposited on the sidewalls and bottomof the trenches 901. As shown in FIGS. 10A and 10B, the insulating layer1001 is deposited on the liner 301 and portions of the insulating layer701. In another embodiment, when the liner 301 is removed, theinsulating layer 1001 is directly deposited on the recessed lines 201and portions of the insulating layer 102 and insulating layer 701. Inone embodiment, the insulating layer 1001 is etch selective to theinsulating layer 701. Generally, etch selectivity between two materialsis defined as the ratio between their etching rates at similar etchingconditions. In one embodiment, the ratio of the etching rate of theinsulating layer 1001 to that of the insulating layer 701 is at least5:1. In one embodiment, the ratio of the etching rates of the insulatinglayer 1001 to that of the insulating layer 701 is in an approximaterange from about 2:1 to about 20:1.

In one embodiment, insulating layer 1001 is a low-k gapfill layer. Inone embodiment, insulating layer 1001 is a flowable silicon oxidecarbide (FSiOC) layer. In some other embodiments, insulating layer 1001is an oxide layer, e.g., silicon dioxide, or any other electricallyinsulating layer determined by an electronic device design. In oneembodiment, insulating layer 1001 is an interlayer dielectric (ILD). Inone embodiment, insulating layer 1001 is a low-k dielectric thatincludes, but is not limited to, materials such as, e.g., silicondioxide, silicon oxide, a carbon based material, e.g., a porous carbonfilm carbon doped oxide (“CDO”), e.g., carbon doped silicon dioxide,porous silicon dioxide, porous silicon oxide carbide hydride (SiOCH),silicon nitride, or any combination thereof. In one embodiment,insulating layer 1001 is a dielectric material having k-value less than3. In more specific embodiment, insulating layer 1001 is a dielectricmaterial having k-value in an approximate range from about 2.2 to about2.7. In one embodiment, insulating layer 1001 includes a dielectricmaterial having k-value less than 2. In one embodiment, insulating layer1001 represents one of the insulating layers described above withrespect to insulating layer 102 and insulating layer 701.

In one embodiment, insulating layer 1001 is a low-k interlayerdielectric to isolate one metal line from other metal lines. In oneembodiment, insulating layer 1001 is deposited using one of depositiontechniques, such as but not limited to a CVD, spin-on, an ALD, PVD, MBE,MOCVD, or other low-k insulating layer deposition techniques known toone of ordinary skill in the art of microelectronic devicemanufacturing.

FIG. 11 is a view similar to FIG. 10B after a hard mask layer 1101 isdeposited on insulating layer 1001 according to one embodiment. FIG. 11is different from FIG. 10B in that the liner 301 is removed, so thatinsulating layer 1001 is directly deposited on the recessed lines 201and portions of the insulating layer 102 and insulating layer 701, asdescribed above. In one embodiment, hard mask layer 1101 is ametallization layer hard mask. As shown in FIG. 11, the hard mask layer1101 is patterned to define a plurality of trenches 1102. As shown inFIG. 11, the trenches 1102 extend along an Y axis (direction) 122 thatcrosses an X axis (direction) 122 at an angle. In one embodiment,direction 122 is substantially perpendicular to direction 121. In oneembodiment, patterned hard mask layer 1101 is a carbon hard mask layer,a metal oxide hard mask layer, a metal nitride hard mask layer, asilicon nitride hard mask layer, a silicon oxide hard mask layer, acarbide hard mask layer, or other hard mask layer known to one ofordinary skill in the art of microelectronic device manufacturing. Inone embodiment, the patterned hard mask layer 1101 is formed using oneor more hard mask patterning techniques known to one of ordinary skillin the art of microelectronic device manufacturing. In one embodiment,the insulating layer 1001 is etched through a patterned hard mask layerto form trenches 104 using one or more of etching techniques known toone of ordinary skill in the art of microelectronic devicemanufacturing. In one embodiment, the size of trenches in the insulatinglayer 1001 is determined by the size of conductive lines formed later onin a process.

FIG. 12A is a view similar to FIG. 11, after a mask layer 1202 isdeposited on an insulating layer 1201 on a patterned hard mask layer1101 according to one embodiment. FIG. 12B is a cross-sectional view ofFIG. 12A along an axis B-B′.

As shown in FIGS. 12A and 12B, an opening 1203 is formed in mask layer1202. Opening 1203 is formed above one of the conductive lines 201, asshown in FIGS. 12A and 12B. In one embodiment, the opening 1203 definesa trench portion of the fully self-aligned via formed later on in aprocess.

In one embodiment, mask layer 1202 includes a photoresist layer. In oneembodiment, mask layer 1202 includes one or more hard mask layers. Inone embodiment, the insulating layer 1201 is a hard mask layer. In oneembodiment, insulating layer 1201 includes a bottom anti-reflectivecoating (BARC) layer. In one embodiment, insulating layer 1201 includesa titanium nitride (TiN) layer, a tungsten carbide (WC) layer, atungsten bromide carbide (WBC) layer, a carbon hard mask layer, a metaloxide hard mask layer, a metal nitride hard mask layer, a siliconnitride hard mask layer, a silicon oxide hard mask layer, a carbide hardmask layer, other hard mask layer, or any combination thereof. In oneembodiment, insulating layer 1201 represents one of the insulatinglayers described above. In one embodiment, mask layer 1202 is depositedusing one or more mask layer deposition techniques known to one ofordinary skill in the art of microelectronic device manufacturing. Inone embodiment, insulating layer 1201 is deposited using one ofdeposition techniques, such as but not limited to a CVD, PVD, MBE,NOCVD, spin-on, or other insulating layer deposition techniques known toone of ordinary skill in the art of microelectronic devicemanufacturing. In one embodiment, the opening 1203 is formed using oneor more of the patterning and etching techniques known to one ofordinary skill in the art of microelectronic device manufacturing.

FIG. 13A is a view 1300 similar to FIG. 12B after the insulating layer1201 and insulating layer 1101 are selectively etched through opening1203 to form an opening 1301 according to one embodiment. FIG. 13B is aview 1310 similar to FIG. 12A after the insulating layer 1201 andinsulating layer 1001 are selectively etched through opening 1203 toform opening 1301 according to one embodiment.

FIG. 13B is different from FIG. 12A in that FIG. 13B shows a cut throughopening 1301 along X axis 121 and Y axis 122. As shown in FIGS. 13A and13B, opening 1301 includes a via portion 1302 and a trench portion 1303.As shown in FIGS. 13A and 13B, via portion 1302 of the opening 1301 islimited along Y axis 122 by insulating layer 701. Via portion 1302 ofthe opening 1301 is self-aligned along Y axis to one of the conductivelines 201. As shown in FIGS. 13A and 13B, trench portion 1303 is limitedalong X axis 121 by the features of the hard mask layer 1101 that extendalong Y axis 122. In one embodiment, insulating layer 1001 isselectively etched relative to the insulating layer 701 to form opening1301.

In one embodiment, insulating layer 1201 is selectively etched relativeto the insulating layer 701 to form opening 1301. As shown in FIGS. 13Aand 13B, mask layer 1202 and insulating layer 1201 are removed. In oneembodiment, mask layer 1202 is removed using one or more of the masklayer removal techniques known to one of ordinary skill in the art ofmicroelectronic device manufacturing. In one embodiment, insulatinglayer 1201 is removed using one or more of the etching techniques knownto one of ordinary skill in the art of microelectronic devicemanufacturing.

FIG. 14A is a view 1400 similar to FIG. 10A, after a mask layer 1402 isdeposited on a hard mask layer 1401 on the exposed insulating layer 701and insulating layer 1001 according to one embodiment. FIG. 14B is a topview 1410 of the electronic device structure depicted in FIG. 14A. Asshown in FIG. 14A, a portion of the insulating layer 1001 is removed toeven out top portions of the insulating layer 701 with top portions ofthe insulating layer 1001. As shown in FIGS. 14A and 14B, mask layer1402 has an opening 1403 to expose hard mask layer 1401.

In one embodiment, the portion of the insulating layer 1001 is removedusing a CMP technique known to one of ordinary skill in the art ofmicroelectronic device manufacturing. In one embodiment, a portion ofthe insulating layer 1001 is etched back to expose the top portion ofthe insulating layer 701. In another embodiment, a portion of theinsulating layer 701 is etched back to a predetermined depth to exposeupper portions of the sidewalls and top portions of the insulating layer1001 in the trenches 901. In one embodiment, the portion of theinsulating layer 701 is etched back using one or more of the dry and wetetching techniques known to one of ordinary skill in the art ofmicroelectronic device manufacturing.

In one embodiment, mask layer 1402 includes a photoresist layer. In oneembodiment, mask layer 1402 includes one or more hard mask layers. Inone embodiment, mask layer 1402 is a tri-layer mask stack, e.g., a 193nm immersion (193i) or EUV resist mask on a middle layer (ML) (e.g., asilicon containing organic layer or a metal containing dielectric layer)on a bottom anti-reflective coating (BARC) layer on a silicon oxide hardmask. In one embodiment, the hard mask layer 1401 is a metallizationlayer hard mask to pattern the conductive lines of the nextmetallization layer. In one embodiment, hard mask layer 1401 includes atitanium nitride (TiN) layer, a tungsten carbide (WC) layer, a tungstenbromide carbide (WBC) layer, a carbon hard mask layer, a metal oxidehard mask layer, a metal nitride hard mask layer, a silicon nitride hardmask layer, a silicon oxide hard mask layer, a carbide hard mask layer,other hard mask layer or any combination thereof. In one embodiment,hard mask layer 1401 represents one of the hard mask layers describedabove.

In one embodiment, the insulating layer 701 and the insulating layer1001 are patterned and etched using hard mask 1401 to form trenchesusing one or more patterning and etching techniques known to one orordinary skill in the art of microelectronic device manufacturing. Inone embodiment, the size of trenches in the insulating layer 701 andinsulating layer 1001 is determined by the size of conductive linesformed later on in a process.

In one embodiment, the mask layer 1402 is deposited using one or more ofthe mask deposition techniques known to one of ordinary skill in the artof microelectronic device manufacturing. In one embodiment, hard masklayer 1401 is deposited using one or more hard mask layer depositiontechniques, such as but not limited to a CVD, PVD, MBE, MOCVD, spin-on,or other hard mask deposition known to one of ordinary skill in the artof microelectronic device manufacturing. In one embodiment, the opening1403 is formed using one or more of the patterning and etchingtechniques known to one of ordinary skill in the art of microelectronicdevice manufacturing.

FIG. 15A is a view 1500 similar to FIG. 14A, after portions of the hardmask layer 1401, insulating layer 701 and insulating layer 1001 areremoved through opening 1403 to form an opening 1501 in insulating layer701 according to one embodiment. FIG. 15B is a top view 1510 of theelectronic device structure depicted in FIG. 15A. In one embodiment,opening 1501 is a trench opening for a via. As shown in FIGS. 15A and15B, opening 1501 includes a bottom 1505 that includes a portion 1502 ofthe insulating layer 1001 between portions 1503 and 1504 of theinsulating layer 701. As shown in FIGS. 15A and 15B, opening 1501includes opposing sidewalls 1506 that include portions of the insulatinglayer 701. In one embodiment, each sidewall 1506 is substantiallyorthogonal to bottom 1505. In another embodiment, each sidewall 1506 isslanted relative to bottom 1505 at an angle other than 90 degrees, sothat an upper portion of the opening 1501 is greater than a lowerportion of the opening 1501.

In one embodiment, opening 1501 having slanted sidewalls is formed usingan angled non-selective etch. In one embodiment, hard mask layer 1401 isremoved using one or more of wet etching, dry etching, or a combinationthereof techniques known to one of ordinary skill in the art ofmicroelectronic device manufacturing. In one embodiment, insulatinglayer 701 and insulating layer 1001 are removed using a non-selectiveetch in a trench first dual damascene process. In one embodiment,insulating layer 701 and insulating layer 1001 are etched down to thedepth that is determined by time. In another embodiment, insulatinglayer 701 and insulating layer 1001 are etched non-selectively down toan etch stop layer (not shown). In one embodiment, insulating layer 701and insulating layer 1001 are non-selectively etched using one or moreof wet etching, dry etching, or a combination thereof techniques knownto one of ordinary skill in the art of electronic device manufacturing.

FIG. 16A is a view 1600 similar to FIG. 15A, after a fully self-alignedopening 1601 is formed in insulating layer 701 according to oneembodiment. FIG. 16B is a top view 1610 of the electronic devicestructure depicted in FIG. 16A. As shown in FIGS. 16A and 16B, masklayer 1402 is removed. Mask layer 1402 can be removed using one of themask layer removal techniques known to one of ordinary skill in the artof microelectronic device manufacturing. A patterned mask layer 1607 isformed on hard mask layer 1401. As shown in FIG. 16B, patterned masklayer 1607 is deposited on the hard mask layer 1401 and into opening1501. Patterned mask layer 1607 has an opening 1604. Patterned masklayer 1607 can be formed using one or more of the mask layer depositing,patterning and etching techniques known to one of ordinary skill in theart of microelectronic device manufacturing.

Fully self-aligned opening 1601 is formed through mask opening 1604.Fully self-aligned opening 1601 includes a trench opening 1603 and a viaopening 1602, as shown in FIGS. 16A and 16B. Via opening 1602 isunderneath trench opening 1603. In one embodiment, trench opening 1603is the part of the that is exposed through opening 1604.

In one embodiment, via opening 1602 is formed by selectively etchinginsulating layer 1001 relative to the insulating layer 701 through maskopening 1604 and trench opening 1603. In one embodiment, trench opening1603 extends along Y axis 122. As shown in FIG. 16B, trench opening 1603is greater along Y axis 122 than along X axis 121.

In one embodiment, trench opening 1603 of the opening 1601 isself-aligned along X-axis 121 between the features of the hard masklayer 1401 that are used to pattern the upper metallization layerconductive lines that extend along Y axis 122 (not shown). The viaopening 1602 of the opening 1601 is self-aligned along Y-axis 122 by theinsulating layer 701 that is left intact by selectively etching theportion 1502 of the insulating layer 1001 relative to the insulatinglayer 701. This provides an advantage as the size of the trench opening1603 does not need to be limited to the size of the cross-sectionbetween the conductive line 1608 and one of the conductive lines of theupper metallization layer that provides more flexibility for thelithography equipment. As the portion 1502 is selectively removedrelative to the insulating layer 701, the size of the trench openingincreases.

As shown in FIGS. 15A and 15B, the portion 1502 is self-aligned with aconductive line 1608 that is one of the lower metallization layerconductive lines 201. That is, the opening 1601 is self-aligned alongboth X and Y axes.

FIG. 16A is different from FIG. 15A in that FIG. 16A illustrates trenchopening 1603 having slanted sidewalls 1605. Each sidewall 1605 is at anangle other than 90 degrees to the top surface of the substrate 101, sothat an upper portion of the trench opening 1603 is greater than a lowerportion of the trench opening 1603. In another embodiment, the sidewalls1605 are substantially orthogonal to the top surface of the substrate101.

In one embodiment, mask layer 1607 includes a photoresist layer. In oneembodiment, mask layer 1607 includes one or more hard mask layers. Inone embodiment, mask layer 1607 is tri-layer mask stack, e.g., a 193i orEUV resist mask on a ML (e.g., a silicon containing organic layer or ametal containing dielectric layer) on a BARC layer on a silicon oxidehard mask. As shown in FIGS. 16A and 16B, via opening 1602 exposes aportion 1606 of the liner 301 on conductive line 1608. In anotherembodiment, when the liner 301 is removed, the via opening 1602 exposesconductive line 1608.

FIG. 17A is a view 1700 similar to FIG. 16A, after an uppermetallization layer My comprising conductive lines extending along Yaxis 122 is formed according to one embodiment. FIG. 17B is a top view1710 of the electronic device structure depicted in FIG. 17A. FIG. 17Ais a cross-sectional view of FIG. 17B along an axis C-C′. As shown inFIG. 17A, mask layer 1402 and hard mask layer 1401 are removed. In oneembodiment, each of the mask layer 1402 and hard mask layer 1401 isremoved using one or more of the hard mask layer removal techniques knowin one of ordinary skill in the art of microelectronic devicemanufacturing.

An upper metallization layer My includes a set of conductive lines 1701that extend on portions of insulating layer 1001 and portions insulatinglayer 701. As shown in FIG. 17B, the portions of the insulating layer1001 are between the portions of the insulating layer 701. Conductivelines 1701 extend along Y axis 122. A fully self-aligned via 1712includes a trench portion 1702 and a via portion 1703. Via portion 1703is underneath trench portion 1702. The fully self-aligned via 1712 isbetween the lower metallization layer comprising conductive lines 201that extend along X axis 121 and the upper metallization layercomprising conductive lines 1701. As shown in FIGS. 17A and 17B, the viaportion 1703 is on liner 301 on conductive line 1608. As shown in FIGS.17A and 17B, the via portion 1703 of the via 1712 is self-aligned alongthe Y axis 122 to conductive line 1608 that is one of the conductivelines 201. The via portion 1703 of the via 1712 is self-aligned alongthe X axis (direction) 121 to a conductive line 1711 that is one of theconductive lines 1701. In one embodiment, when liner 301 is removed, thevia portion 1703 is directly on conductive line 1608. As shown in FIGS.17A and 17B, the via portion 1703 is a part of the conductive line 1711.As shown in FIGS. 17A and 17B, the size of the via portion 1703 isdetermined by the size of the cross-section between the conductive line1608 and conductive line 1711.

In one embodiment, forming the conductive lines 1701 and via 1712involves filling the trenches in the insulating layer and the opening1601 with a layer of conductive material. In one embodiment, a baselayer (not shown) is first deposited on the internal sidewalls andbottom of the trenches and the opening 1601, and then the conductivelayer is deposited on the base layer. In one embodiment, the base layerincludes a conductive seed layer (not shown) deposited on a conductivebarrier layer (not shown). The seed layer can include copper, and theconductive barrier layer can include aluminum, titanium, tantalum,tantalum nitride, and the like metals. The conductive barrier layer canbe used to prevent diffusion of the conductive material from the seedlayer, e.g., copper, into the insulating layer. Additionally, theconductive barrier layer can be used to provide adhesion for the seedlayer (e.g, copper).

In one embodiment, to form the base layer, the conductive barrier layeris deposited onto the sidewalls and bottom of the trenches, and then theseed layer is deposited on the conductive barrier layer. In anotherembodiment, the conductive base layer includes the seed layer that isdirectly deposited onto the sidewalls and bottom of the trenches. Eachof the conductive barrier layer and seed layer may be deposited usingany thin film deposition technique known to one of ordinary skill in theart of semiconductor manufacturing, e.g., sputtering, blanketdeposition, and the like. In one embodiment, each of the conductivebarrier layer and the seed layer has the thickness in an approximaterange from about 1 nm to about 100 nm. In one embodiment, the barrierlayer may be a thin dielectric that has been etched to establishconductivity to the metal layer below. In one embodiment, the barrierlayer may be omitted altogether and appropriate doping of the copperline may be used to make a “self-forming barrier”.

In one embodiment, the conductive layer e.g., copper, is deposited ontothe seed layer of base later of copper, by an electroplating process. Inone embodiment, the conductive layer is deposited into the trenchesusing a damascene process known to one of ordinary skill in the art ofmicroelectronic device manufacturing. In one embodiment, the conductivelayer is deposited onto the seed layer in the trenches and in theopening 1601 using a selective deposition technique, such as but notlimited to electroplating, electroless, a CVD, PVD, MBE, MOCVD, ALD,spin-on, or other deposition techniques known to one of ordinary skillin the art of microelectronic device manufacturing.

In one embodiment, the choice of a material for conductive layer for theconductive lines 1701 and via 1712 determines the choice of a materialfor the seed layer. For example, if the material for the conductivelines 1701 and via 1712 includes copper, the material for the seed layeralso includes copper. In one embodiment, the conductive lines 1701 andvia 1712 include a metal, for example, copper (Cu), ruthenium (Ru),nickel (Ni), cobalt (Co), chromium (Cr), iron (Fe), manganese (Mn),titanium (Ti), aluminum (Al), hafnium (Hf), tantalum (Ta), tungsten (W),vanadium (V), molybdenum (Mo), palladium (Pd), gold (Au), silver (Ag),platinum (Pt), indium (In), tin (Sn), lead (Pb), antimony (Sb), bismuth(Bi), zinc (Zn), cadmium (Cd), or any combination thereof.

In alternative embodiments, examples of the conductive materials thatmay be used for the conductive lines 1701 and via 1712 are, but notlimited to, metals, e.g., copper, tantalum, tungsten, ruthenium,titanium, hafnium, zirconium, aluminum, silver, tin, lead, metal alloys,metal carbides, e.g., hafnium carbide, zirconium carbide, titaniumcarbide, tantalum carbide, aluminum carbide, other conductive materials,or any combination thereof.

In one embodiment, portions of the conductive layer and the base layerare removed to even out top portions of the conductive lines 1701 withtop portions of the insulating layer 701 and insulating layer 1001 usinga chemical-mechanical polishing (“CMP”) technique known to one ofordinary skill in the art of microelectronic device manufacturing.

In one non-limiting example, the thickness of the conductive lines 1701is in an approximate range from about 15 nm to about 1000 nm. In onenon-limiting example, the thickness of the conductive lines 1701 is fromabout 20 nm to about 200 nm. In one non-limiting example, the width ofthe conductive lines 1701 is in an approximate range from about 5 nm toabout 500 nm. In one non-limiting example, the spacing (pitch) betweenthe conductive lines 1701 is from about 2 nm to about 500 nm. In morespecific non-limiting example, the spacing (pitch) between theconductive lines 1701 is from about 5 nm to about 50 nm.

FIGS. 18 through 22 (including both A and B designations) illustrateanother embodiment of the disclosure. FIG. 18A is a view 1800 similar toFIG. 10A, after a mask layer 1802 is deposited on a hard mask layer 1801on the insulating layer 1001 according to one embodiment. FIG. 18B is atop view 1810 of the electronic device structure depicted in FIG. 18A.As shown in FIGS. 18A and 18B, mask layer 1802 has an opening 1803 toexpose hard mask layer 1801.

In one embodiment, mask layer 1802 includes a photoresist layer. In oneembodiment, mask layer 1802 includes one or more hard mask layers. Inone embodiment, mask layer 1802 is a tri-layer mask stack, e.g., a 193nm immersion (193i) or EUV resist mask on a middle layer (ML) (e.g., asilicon containing organic layer or a metal containing dielectric layer)on a bottom anti-reflective coating (BARC) layer on a silicon oxide hardmask. In one embodiment, the hard mask layer 1801 is a metallizationlayer hard mask to pattern the conductive lines of the nextmetallization layer. In one embodiment, hard mask layer 1801 includes atitanium nitride (TiN) layer, a tungsten carbide (WC) layer, a tungstenbromide carbide (WBC) layer, a carbon hard mask layer, a metal oxidehard mask layer, a metal nitride hard mask layer, a silicon nitride hardmask layer, a silicon oxide hard mask layer, a carbide hard mask layer,other hard mask layer or any combination thereof. In one embodiment,hard mask layer 1801 represents one of the hard mask layers describedabove.

In one embodiment, the mask layer 1802 is deposited using one or more ofthe mask deposition techniques known to one of ordinary skill in the artof microelectronic device manufacturing. In one embodiment, hard masklayer 1801 is deposited using one or more hard mask layer depositiontechniques, such as but not limited to a CVD, PVD, MBE, MOCVD, spin-on,or other hard mask deposition known to one of ordinary skill in the artof microelectronic device manufacturing. In one embodiment, the opening1803 is formed using one or more of the patterning and etchingtechniques known to one of ordinary skill in the art of microelectronicdevice manufacturing.

FIG. 19A is a view 1900 similar to FIG. 18A, after portions of the hardmask layer 1801 and insulating layer 1001 are removed through opening1803 to form an opening 1901 in insulating layer 1001 according to oneembodiment. FIG. 19B is a top view 1910 of the electronic devicestructure depicted in FIG. 19A. In one embodiment, opening 1901 is atrench opening for a via. As shown in FIGS. 19A and 19B, opening 1901includes a bottom 1905 that includes a portion 1902 of the insulatinglayer 1001 between portions 1903 and 1904 of the insulating layer 701.As shown in FIGS. 19A and 19B, opening 1901 includes opposing sidewalls1906 that include portions of the insulating layer 1001. In oneembodiment, each sidewall 1906 is substantially orthogonal to bottom1905. In another embodiment, each sidewall 1906 is slanted relative tobottom 1905 at an angle other than 90 degrees, so that an upper portionof the opening 1901 is greater than a lower portion of the opening 1901.

In one embodiment, opening 1901 having slanted sidewalls is formed usingan angled non-selective etch. In one embodiment, hard mask layer 1801 isremoved using one or more of wet etching, dry etching, or a combinationthereof techniques known to one of ordinary skill in the art ofmicroelectronic device manufacturing. In one embodiment, insulatinglayer 1001 is removed using a non-selective etch in a trench first dualdamascene process. In one embodiment, insulating layer 1001 is etcheddown to the depth that is determined by time. In another embodiment,insulating layer 1001 is etched non-selectively down to an etch stoplayer (not shown). In one embodiment, insulating layer 1001 isnon-selectively etched using one or more of wet etching, dry etching, ora combination thereof techniques known to one of ordinary skill in theart of electronic device manufacturing.

FIG. 20A is a view 2000 similar to FIG. 19A, after mask layer 1802 isremoved, planarization filling layer 2001 is formed and mask layer 2002with a fully self-aligned opening 2003 is formed according to oneembodiment. FIG. 20B is a top view 2010 of the electronic devicestructure depicted in FIG. 20A. As shown in FIGS. 20A and 20B, masklayer 1802 is removed. Mask layer 1802 can be removed using one of themask layer removal techniques known to one of ordinary skill in the artof microelectronic device manufacturing. A planarization filling layer2001 is formed in opening 1901 onto the tops of exposed insulating layer701 and insulating layer 1001. The planarization filling layer 2001illustrated is formed so that an overburden 2004 is formed on hard mask1801. In some embodiments, the planarization filling layer 2001 isformed to be substantially coplanar with the hard mask 1801. In someembodiments, the planarization filling layer 2001 is planarized, forexample, by a CMP process. The planarization filling layer 2001 can beany suitable material including, but not limited to, BARC (BottomAnti-Reflective Coating) layer (e.g., spin-on polymers containing C andH, or Si), DARC (Dielectric Anti-Reflective Coating) layer or an OPL(Organic Planarization Layer). The planarization filling layer 2001 ofsome embodiments is deposited by CVD or ALD. In some embodiments, theplanarization filling layer 2001 comprises one or more atoms of Si, O,N, C or H.

A patterned mask layer 2002 is formed on hard mask layer 1801. As shownin FIG. 20B, patterned mask layer 2002 is deposited on the planarizationfilling layer 2001. Patterned mask layer 2002 has an opening 2003.Patterned mask layer 2002 can be formed using one or more of the masklayer depositing, patterning and etching techniques known to one ofordinary skill in the art of microelectronic device manufacturing.

In one embodiment, mask layer 2007 includes a photoresist layer. In oneembodiment, mask layer 2007 includes one or more hard mask layers. Inone embodiment, mask layer 2007 is tri-layer mask stack, e.g., a 193i orEUV resist mask on a ML (e.g., a silicon containing organic layer or ametal containing dielectric layer) on a BARC layer on a silicon oxidehard mask.

FIG. 21A is a view 2100 similar to FIG. 20A, after removing theplanarization filling layer 2001 and insulating layer 1001 throughopening 2003. The embodiment illustrated has the patterned hard masklayer 2002 and planarization filling layer 2001 removed from hard mask1801. A fully self-aligned opening 2101 is formed through mask opening2003. Fully self-aligned opening 2101 includes a trench opening 2103 anda via opening 2102, as shown in FIGS. 21A and 21B. Via opening 2102 isunderneath trench opening 2103.

In one or more embodiments, via opening 2102 is formed by selectivelyetching insulating layer 1001 relative to the insulating layer 701through mask opening 2003 and trench opening 2103. In one embodiment,trench opening 2103 extends along Y axis 122. As shown in FIG. 21B,trench opening 2103 is greater along Y axis 122 than along X axis 121.

In one embodiment, trench opening 2103 of the opening 2101 isself-aligned along X-axis between the features of the hard mask layer1801 that are used to pattern the upper metallization layer conductivelines that extend along Y axis 122 (not shown). The via opening 2102 ofthe opening 2101 is self-aligned along Y-axis 122 by the insulatinglayer 701 that is left intact by selectively etching the portion 1902 ofthe insulating layer 1001 relative to the insulating layer 701. Thisprovides an advantage as the size of the trench opening 2103 does notneed to be limited to the size of the cross-section between theconductive line 2108 and one of the conductive lines of the uppermetallization layer that provides more flexibility for the lithographyequipment. As the portion 1902 is selectively removed relative to theinsulating layer 701, the size of the trench opening increases.

As shown in FIGS. 19A and 19B, the portion 1902 is self-aligned with aconductive line 2108 that is one of the lower metallization layerconductive lines 201. That is, the opening 2101 is self-aligned alongboth X and Y axes.

FIG. 21A illustrates trench opening 2103 having sidewalls 2105 that aresubstantially orthogonal to the top surface of the substrate 101. Insome embodiments, each sidewall 2105 is at an angle other than 90degrees to the top surface of the substrate 101, so that an upperportion of the trench opening 2103 is greater than a lower portion ofthe trench opening 2103.

As shown in FIGS. 21A and 21B, via opening 2102 exposes a portion 2106of the liner 301 on conductive line 2108. In another embodiment, whenthe liner 301 is removed, the via opening 2102 exposes conductive line2108.

FIG. 22A is a view 2200 similar to FIG. 21A, after an uppermetallization layer My comprising conductive lines extending along Yaxis 122 is formed according to one embodiment. FIG. 22B is a top view2210 of the electronic device structure depicted in FIG. 22A. FIG. 22Ais a cross-sectional view of FIG. 22B taken along an axis C-C′. As shownin FIG. 22A, hard mask layer 1801 is removed. In one embodiment, hardmask layer 1801 is removed using one or more of the hard mask layerremoval techniques know in one of ordinary skill in the art ofmicroelectronic device manufacturing.

An upper metallization layer My includes a set of conductive lines 2201that extend on portions of insulating layer 701. In the embodimentillustrated in FIG. 22A, the conductive lines 2201 are filled to beco-planar with the top of insultaing layer 1001. In some embodiments,the conductive lines 2201 extend above the top surface of insulatinglayer 1001, similar to that shown in FIG. 17A.

As shown in FIG. 22B, the portions of the insulating layer 1001 arebetween the portions of the insulating layer 701. Conductive lines 2201extend along Y axis 122. A fully self-aligned via 2212 includes a trenchportion 2202 and a via portion 2203. Via portion 2203 is underneathtrench portion 2202. The fully self-aligned via 2212 is between thelower metallization layer comprising conductive lines 201 that extendalong X axis 121 and the upper metallization layer comprising conductivelines 2201. As shown in FIGS. 22A and 22B, the via portion 2203 is onliner 301 on conductive line 2108. As shown in FIGS. 22A and 22B, thevia portion 2203 of the via 2212 is self-aligned along the Y axis 122 toconductive line 2108 that is one of the conductive lines 201. The trenchportion 2203 of the via 2212 is self-aligned along the X axis 121. Inone embodiment, when liner 301 is removed, the via portion 2203 isdirectly on conductive line 2108.

In one embodiment, forming the conductive lines 2201 and via 2212involves filling the trenches in the insulating layer and the opening2101 with a layer of conductive material. In one embodiment, a baselayer (not shown) is first deposited on the internal sidewalls andbottom of the trenches and the opening 2101, and then the conductivelayer is deposited on the base layer. In one embodiment, the base layerincludes a conductive seed layer (not shown) deposited on a conductivebarrier layer (not shown). The seed layer can include copper, and theconductive barrier layer can include aluminum, titanium, tantalum,tantalum nitride, and the like metals. The conductive barrier layer canbe used to prevent diffusion of the conductive material from the seedlayer, e.g., copper, into the insulating layer. Additionally, theconductive barrier layer can be used to provide adhesion for the seedlayer (e.g, copper).

In one embodiment, to form the base layer, the conductive barrier layeris deposited onto the sidewalls and bottom of the trenches, and then theseed layer is deposited on the conductive barrier layer. In anotherembodiment, the conductive base layer includes the seed layer that isdirectly deposited onto the sidewalls and bottom of the trenches. Eachof the conductive barrier layer and seed layer may be deposited usingany thin film deposition technique known to one of ordinary skill in theart of semiconductor manufacturing, e.g., sputtering, blanketdeposition, and the like. In one embodiment, each of the conductivebarrier layer and the seed layer has the thickness in an approximaterange from about 1 nm to about 100 nm. In one embodiment, the barrierlayer may be a thin dielectric that has been etched to establishconductivity to the metal layer below. In one embodiment, the barrierlayer may be omitted altogether and appropriate doping of the copperline may be used to make a “self-forming barrier”.

In one embodiment, the conductive layer e.g., copper, is deposited ontothe seed layer of base later of copper, by an electroplating process. Inone embodiment, the conductive layer is deposited into the trenchesusing a damascene process known to one of ordinary skill in the art ofmicroelectronic device manufacturing. In one embodiment, the conductivelayer is deposited onto the seed layer in the trenches and in theopening 1601 using a selective deposition technique, such as but notlimited to electroplating, electroless, a CVD, PVD, MBE, MOCVD, ALD,spin-on, or other deposition techniques known to one of ordinary skillin the art of microelectronic device manufacturing.

In one embodiment, the choice of a material for conductive layer for theconductive lines 2201 and via 2212 determines the choice of a materialfor the seed layer. For example, if the material for the conductivelines 2201 and via 2212 includes copper, the material for the seed layeralso includes copper. In one embodiment, the conductive lines 2201 andvia 2212 include a metal, for example, copper (Cu), ruthenium (Ru),nickel (Ni), cobalt (Co), chromium (Cr), iron (Fe), manganese (Mn),titanium (Ti), aluminum (Al), hafnium (Hf), tantalum (Ta), tungsten (W),vanadium (V), molybdenum (Mo), palladium (Pd), gold (Au), silver (Ag),platinum (Pt), indium (In), tin (Sn), lead (Pb), antimony (Sb), bismuth(Bi), zinc (Zn), cadmium (Cd), or any combination thereof.

In alternative embodiments, examples of the conductive materials thatmay be used for the conductive lines 2201 and via 2212 are, but notlimited to, metals, e.g., copper, tantalum, tungsten, ruthenium,titanium, hafnium, zirconium, aluminum, silver, tin, lead, metal alloys,metal carbides, e.g., hafnium carbide, zirconium carbide, titaniumcarbide, tantalum carbide, aluminum carbide, other conductive materials,or any combination thereof.

In one embodiment, portions of the conductive layer and the base layerare removed to even out top portions of the conductive lines 2201 withtop portions of the insulating layer 1001 using a chemical-mechanicalpolishing (“CMP”) technique known to one of ordinary skill in the art ofmicroelectronic device manufacturing.

In one non-limiting example, the thickness of the conductive lines 2201is in an approximate range from about 15 nm to about 1000 nm. In onenon-limiting example, the thickness of the conductive lines 2201 is fromabout 20 nm to about 200 nm. In one non-limiting example, the width ofthe conductive lines 2201 is in an approximate range from about 5 nm toabout 500 nm. In one non-limiting example, the spacing (pitch) betweenthe conductive lines 2201 is from about 2 nm to about 500 nm. In morespecific non-limiting example, the spacing (pitch) between theconductive lines 2201 is from about 5 nm to about 50 nm.

In an embodiment, the upper metallization layer My is configured toconnect to other metallization layers (not shown). In an embodiment, themetallization layer My is configures to provide electrical contact toelectronic devices, e.g., transistors, memories, capacitors, resistors,optoelectronic devices, switches, and any other active and passiveelectronic devices that are separated by an electrically insulatinglayer, for example, an interlayer dielectric, a trench insulation layer,or any other insulating layer known to one or ordinary skill in the artof electronic device manufacturing.

FIG. 23 shows a block diagram of a plasma system to perform at leastsome of the operations to provide a fully self-aligned via according toone embodiment. As shown in FIG. 23, system 2300 has a processingchamber 2301. A movable pedestal 2302 to hold an electronic devicestructure 2303 is placed in processing chamber 2301. Pedestal 2302comprises an electrostatic chuck (“ESC”), a DC electrode embedded intothe ESC, and a cooling/heating base. In an embodiment, pedestal 2301acts as moving cathode. In an embodiment, the ESC comprises an Al₂O₃material, Y₂O₃ or other ceramic materials known to one of ordinary skillof electronic device manufacturing. A DC power supply 2304 is connectedto the DC electrode of the pedestal 2302.

As shown in FIG. 23, an electronic device structure 2303 is loadedthrough an opening 2308 and placed on the pedestal 2302. The electronicdevice structure 2303 represents one of the electronic device structuresdescribed above. System 2300 comprises an inlet to input one or moreprocess gases 2312 through a mass flow controller 2311 to a plasmasource 2313. A plasma source 2313 comprising a showerhead 2314 iscoupled to the processing chamber 2301 to receive one or more gases 2312to generate plasma. Plasma source 2313 is coupled to a RF source power2310. Plasma source 2313 through showerhead 2314 generates a plasma 2315in processing chamber 2301 from one or more process gases 2312 using ahigh frequency electric field. Plasma 2315 comprises plasma particles,such as ions, electrons, radicals, or any combination thereof. In anembodiment, power source 2310 supplies power from about 50 W to about3000 W at a frequency from about 400 kHz to about 162 MHz to generateplasma 2315.

A plasma bias power 2305 is coupled to the pedestal 2302 (e.g., cathode)via a RF match 2307 to energize the plasma. In an embodiment, the plasmabias power 2305 provides a bias power that is not greater than 1000 W ata frequency between about 2 MHz to 60 MHz, and in a particularembodiment at about 13 MHz. A plasma bias power 2306 may also beprovided, for example, to provide another bias power that is not greaterthan 1000 W at a frequency from about 400 kHz to about 60 MHz, and in aparticular embodiment, at about 60 MHz. Plasma bias power 2306 and biaspower 2305 are connected to RF match 2307 to provide a dual frequencybias power. In an embodiment, a total bias power applied to the pedestal2302 is from about 10 W to about 3000 W.

As shown in FIG. 23, a pressure control system 2309 provides a pressureto processing chamber 2301. As shown in FIG. 23, chamber 2301 has one ormore exhaust outlets 2316 to evacuate volatile products produced duringprocessing in the chamber. In an embodiment, the plasma system 2300 isan inductively coupled plasma (ICP) system. In an embodiment, the plasmasystem 2300 is a capacitively coupled plasma (CCP) system.

A control system 2317 is coupled to the chamber 2301. The control system2317 comprises a processor 2318, a temperature controller 2319 coupledto the processor 2318, a memory 2320 coupled to the processor 2318, andinput/output devices 2321 coupled to the processor 2318 to form fullyself-aligned via as described herein.

In one embodiment, the processor 2318 has a configuration to controlrecessing first conductive lines on a first insulating layer on asubstrate, the first conductive lines extending along a first directionon the first insulating layer. The processor 2318 has a configuration tocontrol depositing a liner on the recessed first conductive lines. Theprocessor has a configuration to control selectively growing a seedlayer on the recessed first conductive lines. The processor 2318 has aconfiguration to control forming pillars using the selectively grownseed layer. The processor 2318 has a configuration to control depositinga second insulating layer between the pillars. The processor 2318 has aconfiguration to control removing the pillars to form trenches in thesecond insulating layer. The processor 2318 has a configuration tocontrol depositing a third insulating layer into the trenches in thesecond insulating layer. The processor 2318 has a configuration tocontrol selectively etching the third insulating layer relative to thesecond insulating layer to form a fully self-aligned via opening down toone of the first conductive lines. The processor 2318 has aconfiguration to control depositing a conductive layer into theself-aligned via opening, as described above.

The control system 2317 is configured to perform at least some of themethods as described herein and may be either software or hardware or acombination of both. The plasma system 2300 may be any type of highperformance processing plasma systems known in the art, such as but notlimited to, an etcher, a cleaner, a furnace, or any other plasma systemto manufacture electronic devices.

In the foregoing specification, embodiments of the disclosure have beendescribed with reference to specific exemplary embodiments thereof. Itwill be evident that various modifications may be made thereto withoutdeparting from the broader spirit and scope of the embodiments of thedisclosure as set forth in the following claims. The specification anddrawings are, accordingly, to be regarded in an illustrative senserather than a restrictive sense.

What is claimed is:
 1. A method to provide a self-aligned via,comprising: recessing first conductive lines on a first insulating layeron a substrate, the first conductive lines extending along a firstdirection on the first insulating layer; forming pillars on the recessedfirst conductive lines; depositing a second insulating layer between thepillars; removing the pillars to form trenches in the second insulatinglayer; depositing a third insulating layer through the trenches onto therecessed first conductive lines; and etching the third insulating layerselectively relative to the second insulating layer to form a viaopening down to one of the first conductive lines.
 2. The method ofclaim 1, wherein the via opening is self-aligned along the firstdirection and a second direction to the one of the first conductivelines, the second direction crossing the first direction at an angle. 3.The method of claim 1, further comprising selectively growing a seedlayer on the recessed first conductive lines, wherein the pillars areformed on the seed layer.
 4. The method of claim 1, further comprisingforming a hard mask layer on at least one of the second insulating layerand the third insulating layer.
 5. The method of claim 1, furthercomprising depositing a liner on the recessed first conductive lines. 6.The method of claim 1, further comprising depositing a conductive layerinto the via opening.
 7. The method of claim 1, wherein the via openinghas a trench portion and a via portion underneath the trench portion. 8.A system to manufacture an electronic device, comprising: a processingchamber comprising a pedestal to hold an electronic device structurecomprising a first metallization layer comprising a set of firstconductive lines extending along a first direction on a first insulatinglayer on a substrate; a plasma source coupled to the processing chamberto generate plasma; and a processor coupled to the plasma source, theprocessor having a first configuration to control recessing the firstconductive lines, the processor having a second configuration to controlforming pillars on the recessed first conductive lines, the processorhaving a third configuration to control depositing a second insulatinglayer between the pillars: the processor having a fourth configurationto control removing the pillars to form trenches in the secondinsulating layer, the processor having a fifth configuration to controldepositing a third insulating layer through the trenches onto therecessed first conductive lines, and the processor having a sixthconfiguration to control etching the third insulating layer selectivelyrelative to the second insulating layer to form a fully self-aligned viaopening down to one of the first conductive lines.
 9. The system ofclaim 8, wherein the fully self-aligned via opening is self-alignedalong the first direction and a second direction, the second directioncrossing the first direction at an angle.
 10. The system of claim 8,wherein the processor has a sixth configuration to control selectivelygrowing a seed layer on the recessed first conductive lines, wherein thepillars are formed on the seed layer.
 11. The system of claim 8, whereinthe processor has a seventh configuration to control forming a hard masklayer on at least one of the second insulating layer and the thirdinsulating layer.
 12. The system of claim 8, wherein the processor hasan eighth configuration to control depositing a liner on the recessedfirst conductive lines.
 13. The system of claim 8, wherein the processorhas a ninth configuration to control depositing a conductive layer intothe via opening.
 14. A processor-implemented method for forming fullyself-aligned vias, the method comprising: receiving data for a firstconfiguration to control recessing first conductive lines on a firstinsulating layer on a substrate, the first conductive lines extendingalong a first direction on the first insulating layer; receiving datafor a second configuration to control forming pillars on the recessedfirst conductive lines; receiving data for a third configuration tocontrol depositing a second insulating layer between the pillars;receiving data for a fourth configuration to control removing thepillars to form trenches in the second insulating layer; receiving datafor a fifth configuration to control depositing a third insulating layerthrough the trenches onto the recessed first conductive lines; receivingdata for a sixth configuration to control etching the third insulatinglayer selectively relative to the second insulating layer to form afully self-aligned via opening down to one of the recessed firstconductive lines; and performing one or more of the first configuration,second configuration, third configuration, fourth configuration, fifthconfiguration, or sixth configuration.
 15. The processor-implementedmethod of claim 14, wherein the fully self-aligned via opening isself-aligned along the first direction and a second direction, thesecond direction crossing the first direction at an angle.
 16. Theprocessor-implemented method of claim 14, further comprising receivingdata for a sixth configuration to control selectively growing a seedlayer on the recessed first conductive lines, wherein the pillars areformed on the seed layer.
 17. The processor-implemented method of claim14, further comprising receiving data for a seventh configuration tocontrol forming a hard mask layer on at least one of the secondinsulating layer and the third insulating layer.
 18. Theprocessor-implemented method of claim 14, further comprising receivingdata for an eighth configuration to control depositing a liner on therecessed first conductive lines.
 19. The processor-implemented method ofclaim 14, further comprising receiving data for a ninth configuration tocontrol depositing a conductive layer into the fully self-aligned viaopening.
 20. The processor-implement method of claim 14, wherein thefully self-aligned via opening has a trench portion and a via portionunderneath the trench portion